Infineon HEXFET Type N-Channel MOSFET, 23 A, 30 V TO-252 IRLR2703TRPBF
- RS Stock No.:
- 218-3128
- Mfr. Part No.:
- IRLR2703TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
SGD27.70
(exc. GST)
SGD30.20
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
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- Shipping from 16 March 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | SGD1.108 | SGD27.70 |
| 50 - 75 | SGD1.016 | SGD25.40 |
| 100 - 225 | SGD0.938 | SGD23.45 |
| 250 - 475 | SGD0.87 | SGD21.75 |
| 500 + | SGD0.846 | SGD21.15 |
*price indicative
- RS Stock No.:
- 218-3128
- Mfr. Part No.:
- IRLR2703TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 341W | |
| Typical Gate Charge Qg @ Vgs | 162nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Width | 5.31 mm | |
| Height | 20.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 341W | ||
Typical Gate Charge Qg @ Vgs 162nC | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Width 5.31 mm | ||
Height 20.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon HEXFET series N-channel power MOSFET. It utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This MOSFET is designed for surface mounting using vapour phase, infrared, or wave soldering techniques.
Ultra Low On-Resistance
Fast Switching
Fully Avalanche Rated
Lead free
Related links
- Infineon HEXFET Type N-Channel MOSFET 30 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 100 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 150 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-252
- Infineon HEXFET Type N-Channel MOSFET -150 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 30 V TO-252