Infineon HEXFET Type N-Channel MOSFET, 27 A, 55 V TO-252 IRFR4105TRPBF
- RS Stock No.:
- 218-3111
- Mfr. Part No.:
- IRFR4105TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
SGD27.40
(exc. GST)
SGD29.875
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 10,150 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | SGD1.096 | SGD27.40 |
| 50 - 75 | SGD1.006 | SGD25.15 |
| 100 - 225 | SGD0.928 | SGD23.20 |
| 250 - 475 | SGD0.862 | SGD21.55 |
| 500 + | SGD0.836 | SGD20.90 |
*price indicative
- RS Stock No.:
- 218-3111
- Mfr. Part No.:
- IRFR4105TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Forward Voltage Vf | 0.045V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 68W | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.39 mm | |
| Length | 6.73mm | |
| Height | 6.22mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Forward Voltage Vf 0.045V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 68W | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 2.39 mm | ||
Length 6.73mm | ||
Height 6.22mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon HEXFET series 55V N-channel power MOSFET. It utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This MOSFET is designed for surface mounting using vapour phase, infrared, or wave soldering technique.
Ultra Low On-Resistance
Fast Switching
Lead free
Related links
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