Infineon CoolMOS P6 Type N-Channel MOSFET, 13.8 A, 600 V Enhancement, 3-Pin TO-247 IPW60R280P6FKSA1
- RS Stock No.:
- 218-3089
- Mfr. Part No.:
- IPW60R280P6FKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 pack of 5 units)*
SGD19.92
(exc. GST)
SGD21.715
(inc. GST)
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- Shipping from 27 October 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | SGD3.984 | SGD19.92 |
| 10 - 95 | SGD3.65 | SGD18.25 |
| 100 - 245 | SGD3.374 | SGD16.87 |
| 250 - 495 | SGD3.13 | SGD15.65 |
| 500 + | SGD3.048 | SGD15.24 |
*price indicative
- RS Stock No.:
- 218-3089
- Mfr. Part No.:
- IPW60R280P6FKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13.8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | CoolMOS P6 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 104W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 25.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.1mm | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Width | 5.21 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13.8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series CoolMOS P6 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 104W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 25.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 21.1mm | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Width 5.21 mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P6 series N-channel power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. It is used in PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.
Increased MOSFET dv/dt ruggedness
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen free mold compound
Related links
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