Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET, 9 A, 600 V, 3-Pin TO-220 IPP60R280CFD7XKSA1
- RS Stock No.:
- 218-3069
- Mfr. Part No.:
- IPP60R280CFD7XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD33.28
(exc. GST)
SGD36.28
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 340 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD3.328 | SGD33.28 |
| 20 - 90 | SGD3.049 | SGD30.49 |
| 100 - 240 | SGD2.816 | SGD28.16 |
| 250 - 490 | SGD2.612 | SGD26.12 |
| 500 + | SGD2.538 | SGD25.38 |
*price indicative
- RS Stock No.:
- 218-3069
- Mfr. Part No.:
- IPP60R280CFD7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | 600V CoolMOS CFD7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 52W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.45mm | |
| Width | 4.57 mm | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series 600V CoolMOS CFD7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 52W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Height 9.45mm | ||
Width 4.57 mm | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ CFD7 series N-channel power MOSFET. The CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Ultra-fast body diode
Low gate charge
Best-in-class reverse recovery charge (Qrr)
Improved MOSFET reverse diode dv/dt and diF/dt ruggedness
Related links
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