Infineon OptiMOS-TM3 Type N-Channel MOSFET, 45 A, 80 V N, 3-Pin TO-252 IPD135N08N3GATMA1

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Subtotal (1 pack of 20 units)*

SGD24.26

(exc. GST)

SGD26.44

(inc. GST)

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Per unit
Per Pack*
20 - 20SGD1.213SGD24.26
40 - 80SGD1.11SGD22.20
100 - 220SGD1.025SGD20.50
240 - 480SGD0.953SGD19.06
500 +SGD0.925SGD18.50

*price indicative

Packaging Options:
RS Stock No.:
218-3041
Mfr. Part No.:
IPD135N08N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS-TM3

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

13.5mΩ

Channel Mode

N

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

79W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

19nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

2.41mm

Length

6.73mm

Width

6.22 mm

Automotive Standard

No

The Infineon OptiMOS™ series N-channel power MOSFET. The OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

N-channel, normal level

100% avalanche tested

Pb-free plating

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