Infineon HEXFET Type N-Channel MOSFET, 89 A, 55 V TO-263 IRL3705NSTRLPBF
- RS Stock No.:
- 217-2636
- Mfr. Part No.:
- IRL3705NSTRLPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD27.18
(exc. GST)
SGD29.63
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 750 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD2.718 | SGD27.18 |
| 20 - 90 | SGD2.559 | SGD25.59 |
| 100 - 240 | SGD2.358 | SGD23.58 |
| 250 - 490 | SGD2.186 | SGD21.86 |
| 500 + | SGD2.094 | SGD20.94 |
*price indicative
- RS Stock No.:
- 217-2636
- Mfr. Part No.:
- IRL3705NSTRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 89A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 170W | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.83 mm | |
| Height | 17.79mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 89A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 170W | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Maximum Operating Temperature 175°C | ||
Width 4.83 mm | ||
Height 17.79mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface-mount power package
High-current carrying capability package (up to 195 A, die-size dependent)
Capable of being wave-soldered
Related links
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-252 IRLR3705ZTRPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220 IRL3705NPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-263 IRFZ48NSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V, 3-Pin TO-263