Infineon HEXFET N-Channel MOSFET, 51 A, 55 V, 3-Pin TO-263 IRFZ46ZSTRLPBF
- RS Stock No.:
- 214-4463
- Mfr. Part No.:
- IRFZ46ZSTRLPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 800 units)*
SGD1,323.20
(exc. GST)
SGD1,442.40
(inc. GST)
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- Shipping from 25 January 2027
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Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | SGD1.654 | SGD1,323.20 |
| 1600 - 1600 | SGD1.625 | SGD1,300.00 |
| 2400 - 4000 | SGD1.582 | SGD1,265.60 |
| 4800 - 8800 | SGD1.50 | SGD1,200.00 |
| 9600 + | SGD1.343 | SGD1,074.40 |
*price indicative
- RS Stock No.:
- 214-4463
- Mfr. Part No.:
- IRFZ46ZSTRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Power Dissipation Pd | 82W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Power Dissipation Pd 82W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon Strong IRFET power MOSFET is optimized for low RDS(on) and high current capability. It is ideal for low frequency applications requiring performance and ruggedness.
It is optimized for synchronous rectification
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