Infineon HEXFET Type N-Channel MOSFET, 51 A, 55 V, 3-Pin TO-263
- RS Stock No.:
- 214-4463
- Mfr. Part No.:
- IRFZ46ZSTRLPBF
- Manufacturer:
- Infineon
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Subtotal (1 reel of 800 units)*
SGD1,001.60
(exc. GST)
SGD1,092.00
(inc. GST)
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In Stock
- Plus 800 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | SGD1.252 | SGD1,001.60 |
| 1600 - 1600 | SGD1.231 | SGD984.80 |
| 2400 - 4000 | SGD1.199 | SGD959.20 |
| 4800 - 8800 | SGD1.136 | SGD908.80 |
| 9600 + | SGD1.017 | SGD813.60 |
*price indicative
- RS Stock No.:
- 214-4463
- Mfr. Part No.:
- IRFZ46ZSTRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Maximum Power Dissipation Pd | 82W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Maximum Power Dissipation Pd 82W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon Strong IRFET power MOSFET is optimized for low RDS(on) and high current capability. It is ideal for low frequency applications requiring performance and ruggedness.
It is optimized for synchronous rectification
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