Infineon HEXFET Type N-Channel MOSFET, 119 A, 40 V, 3-Pin TO-252 IRFR4104TRPBF
- RS Stock No.:
- 217-2625
- Distrelec Article No.:
- 304-39-423
- Mfr. Part No.:
- IRFR4104TRPBF
- Manufacturer:
- Infineon
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Subtotal (1 pack of 10 units)*
SGD13.30
(exc. GST)
SGD14.50
(inc. GST)
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In Stock
- 3,850 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD1.33 | SGD13.30 |
| 20 - 90 | SGD1.22 | SGD12.20 |
| 100 - 240 | SGD1.124 | SGD11.24 |
| 250 - 490 | SGD1.046 | SGD10.46 |
| 500 + | SGD1.016 | SGD10.16 |
*price indicative
- RS Stock No.:
- 217-2625
- Distrelec Article No.:
- 304-39-423
- Mfr. Part No.:
- IRFR4104TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 119A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.5mΩ | |
| Typical Gate Charge Qg @ Vgs | 89nC | |
| Maximum Power Dissipation Pd | 140W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 119A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.5mΩ | ||
Typical Gate Charge Qg @ Vgs 89nC | ||
Maximum Power Dissipation Pd 140W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 6.22mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance 1
75°C Operating Temperature
Fast Switching R
repetitive Avalanche Allowed up to Tjmax L
ead-Free
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