Infineon HEXFET Type N-Channel MOSFET, 34 A, 200 V Enhancement, 8-Pin SuperSO IRFH5020TRPBF

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Subtotal (1 pack of 10 units)*

SGD15.87

(exc. GST)

SGD17.30

(inc. GST)

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Units
Per unit
Per Pack*
10 - 10SGD1.587SGD15.87
20 - 90SGD1.555SGD15.55
100 - 240SGD1.523SGD15.23
250 - 490SGD1.493SGD14.93
500 +SGD1.464SGD14.64

*price indicative

Packaging Options:
RS Stock No.:
217-2609
Mfr. Part No.:
IRFH5020TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

SuperSO

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

55mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

3.6W

Typical Gate Charge Qg @ Vgs

34nC

Maximum Operating Temperature

150°C

Length

5mm

Width

6 mm

Height

0.9mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon 200V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Normal level : Optimized for 10 V gate drive voltage

Industry standard surface-mount power package

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