Infineon CoolMOS P7 N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-220 IPP80R900P7XKSA1
- RS Stock No.:
- 217-2572
- Mfr. Part No.:
- IPP80R900P7XKSA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
SGD34.70
(exc. GST)
SGD37.82
(inc. GST)
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In Stock
- Plus 160 unit(s) shipping from 14 September 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | SGD1.735 | SGD34.70 |
| 40 - 80 | SGD1.633 | SGD32.66 |
| 100 - 220 | SGD1.504 | SGD30.08 |
| 240 - 480 | SGD1.394 | SGD27.88 |
| 500 + | SGD1.336 | SGD26.72 |
*price indicative
- RS Stock No.:
- 217-2572
- Mfr. Part No.:
- IPP80R900P7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Power Dissipation Pd | 45W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.57mm | |
| Standards/Approvals | No | |
| Height | 29.95mm | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Power Dissipation Pd 45W | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4.57mm | ||
Standards/Approvals No | ||
Height 29.95mm | ||
Length 10.36mm | ||
Automotive Standard No | ||
The Infineon 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.
Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss
Best-in-class DPAK R DS(on) of 280mΩ
Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Fully optimized portfolio
Related links
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- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK IPU80R900P7AKMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-251 IPS80R900P7AKMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223 IPN80R900P7ATMA1
- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 IPA80R900P7XKSA1