Infineon IPD Type N-Channel MOSFET, 2 A, 800 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

SGD2,165.00

(exc. GST)

SGD2,360.00

(inc. GST)

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  • 2,500 unit(s) ready to ship from another location
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Units
Per unit
Per Reel*
2500 - 2500SGD0.866SGD2,165.00
5000 - 5000SGD0.833SGD2,082.50
7500 +SGD0.822SGD2,055.00

*price indicative

RS Stock No.:
217-2531
Mfr. Part No.:
IPD80R2K7C3AATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.7Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

42W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

12nC

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Height

2.41mm

Standards/Approvals

No

Length

6.73mm

Automotive Standard

AEC-Q101

The Infineon CoolMOS™ C3A technology was designed to meet the growing demands of higher system voltages in the area of electric vehicles, such as PHEVs and BEV.

Best-in-class quality and reliability

Higher breakdown voltage

High peak current capability

Automotive AEC Q101 qualified

Green package (RoHS compliant)

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