Infineon CoolMOS P6 Type N-Channel MOSFET, 19.2 A, 600 V Enhancement, 5-Pin VSON IPL60R210P6AUMA1

RS Stock No.:: 214-9076
Mfr. Part No.:: IPL60R210P6AUMA1
Manufacturer:: Infineon

Infineon CoolMOS P6 Type N-Channel MOSFET, 19.2 A, 600 V Enhancement, 5-Pin VSON IPL60R210P6AUMA1

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Subtotal (1 pack of 5 units)*

SGD24.93

(exc. GST)

SGD27.175

(inc. GST)

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In Stock

Plus 2,980 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Pack*
5 - 5	SGD4.986	SGD24.93
10 - 95	SGD4.568	SGD22.84
100 - 245	SGD4.22	SGD21.10
250 - 495	SGD3.91	SGD19.55
500 +	SGD3.81	SGD19.05

*price indicative

RS Stock No.:: 214-9076
Mfr. Part No.:: IPL60R210P6AUMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	19.2A
	Maximum Drain Source Voltage Vds	600V
	Series	CoolMOS P6
	Package Type	VSON
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	210mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Maximum Power Dissipation Pd	151W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	37nC
	Width	8.1 mm
	Height	1.1mm
	Length	8.1mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 19.2A
	Maximum Drain Source Voltage Vds 600V
	Series CoolMOS P6
	Package Type VSON
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 210mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Maximum Power Dissipation Pd 151W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 37nC
	Width 8.1 mm
	Height 1.1mm
	Length 8.1mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPL60R210P6AUMA1

600V CoolMOSªP6 Power Transistor

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Summary of Features

Reduced gate charge (Q g)

Higher V th

Good body diode ruggedness

Optimized integrated R g

Improved dv/dt from 50V/ns

CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits

Improved effciency especially in light load condition

Better efficiency in soft switching applications due to earlier turn-off

Suitable for hard- & soft-switching topologies

Optimized balance of efficiency and ease of use and good controllability of switching behavior

High robustness and better efficiency

Outstanding quality & reliability

Potential Applications

PFC stages for server, telecom rectifier, PC silverbox, gaming consoles

PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles