Infineon OptiMOS Type N-Channel MOSFET, 126 A, 40 V Enhancement, 8-Pin TSDSON BSZ025N04LSATMA1

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 15 units)*

SGD30.375

(exc. GST)

SGD33.105

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • Plus 4,620 unit(s) shipping from 13 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
15 - 15SGD2.025SGD30.38
30 - 75SGD1.857SGD27.86
90 - 225SGD1.712SGD25.68
240 - 465SGD1.591SGD23.87
480 +SGD1.549SGD23.24

*price indicative

Packaging Options:
RS Stock No.:
214-8986
Mfr. Part No.:
BSZ025N04LSATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

126A

Maximum Drain Source Voltage Vds

40V

Package Type

TSDSON

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

69W

Typical Gate Charge Qg @ Vgs

37nC

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Height

1.2mm

Standards/Approvals

No

Length

5.35mm

Automotive Standard

No

The Infineon 40V and 60V product families feature not only the industry’s lowest R DS(on) but also a perfect switching behaviour for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness.

100% avalanche tested

Superior thermal resistance

Optimized for synchronous rectification

Related links