Infineon CoolMOS N-Channel MOSFET, 2 A, 800 V Enhancement, 3-Pin TO-252 SPD02N80C3ATMA1

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Subtotal (1 pack of 15 units)*

SGD17.55

(exc. GST)

SGD19.20

(inc. GST)

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Units
Per unit
Per Pack*
15 - 15SGD1.17SGD17.55
30 - 75SGD1.073SGD16.10
90 - 225SGD0.989SGD14.84
240 - 465SGD0.919SGD13.79
480 +SGD0.891SGD13.37

*price indicative

Packaging Options:
RS Stock No.:
214-4479
Distrelec Article No.:
304-39-428
Mfr. Part No.:
SPD02N80C3ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-252

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.7Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

16nC

Maximum Gate Source Voltage Vgs

30V

Maximum Power Dissipation Pd

42W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC1

Automotive Standard

No

This Infineon Cool MOS MOSFET uses new revolutionary high voltage technology and has high peak current capability.

It has ultra low gate charge

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