Infineon CoolMOS Type N-Channel MOSFET, 2 A, 800 V Enhancement, 3-Pin TO-252 SPD02N80C3ATMA1
- RS Stock No.:
- 214-4479
- Distrelec Article No.:
- 304-39-428
- Mfr. Part No.:
- SPD02N80C3ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 15 units)*
SGD19.83
(exc. GST)
SGD21.615
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 2,340 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | SGD1.322 | SGD19.83 |
| 30 - 75 | SGD1.211 | SGD18.17 |
| 90 - 225 | SGD1.117 | SGD16.76 |
| 240 - 465 | SGD1.038 | SGD15.57 |
| 480 + | SGD1.007 | SGD15.11 |
*price indicative
- RS Stock No.:
- 214-4479
- Distrelec Article No.:
- 304-39-428
- Mfr. Part No.:
- SPD02N80C3ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.7Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Power Dissipation Pd | 42W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.7Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Power Dissipation Pd 42W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC1 | ||
Automotive Standard No | ||
This Infineon Cool MOS MOSFET uses new revolutionary high voltage technology and has high peak current capability.
It has ultra low gate charge
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