Infineon HEXFET Type N-Channel MOSFET, 88 A, 100 V, 3-Pin TO-263
- RS Stock No.:
- 214-4458
- Mfr. Part No.:
- IRFS4410TRLPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 800 units)*
SGD2,242.40
(exc. GST)
SGD2,444.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 3,200 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 1600 | SGD2.803 | SGD2,242.40 |
| 2400 - 3200 | SGD2.698 | SGD2,158.40 |
| 4000 + | SGD2.53 | SGD2,024.00 |
*price indicative
- RS Stock No.:
- 214-4458
- Mfr. Part No.:
- IRFS4410TRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 88A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 200W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 88A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 200W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon HEXFET Power MOSFET has improved Gate, Avalanche and Dynamic dv/dt Ruggedness. It is suitable for high efficiency synchronous rectification in SMPS.
It is Halogen-free according to IEC61249-2-21
Related links
- Infineon HEXFET Type N-Channel MOSFET 100 V, 3-Pin TO-263 IRFS4410TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 100 V PQFN IRLH5030TRPBF
- Infineon OptiMOS Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 IPB107N20N3GATMA1
- Infineon HEXFET Type N-Channel MOSFET 40 V, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 100 V, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 30 V, 3-Pin TO-263