Infineon DirectFET N-Channel MOSFET, 25 A, 100 V, 3-Pin DirectFET IRF6645TRPBF
- RS Stock No.:
- 214-4455
- Mfr. Part No.:
- IRF6645TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (10 units, in packs of 10)*
SGD19.50
(exc. GST)
SGD21.30
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
In Stock
- 3,320 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD1.95 | SGD19.50 |
| 20 - 90 | SGD1.787 | SGD17.87 |
| 100 - 240 | SGD1.651 | SGD16.51 |
| 250 - 490 | SGD1.535 | SGD15.35 |
| 500 + | SGD1.492 | SGD14.92 |
*price indicative
- RS Stock No.:
- 214-4455
- Mfr. Part No.:
- IRF6645TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | DirectFET | |
| Series | DirectFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Power Dissipation Pd | 42W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type DirectFET | ||
Series DirectFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Power Dissipation Pd 42W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon Strong IRFET power MOSFET is optimized for low RDS(on) and high current capability. It is ideal for low frequency applications requiring performance and ruggedness.
It is optimized for synchronous rectification
Related links
- Infineon DirectFET N-Channel MOSFET 100 V, 3-Pin DirectFET
- Infineon DirectFET N-Channel MOSFET 40 V Enhancement, 4-Pin MX
- Infineon DirectFET N-Channel MOSFET 40 V Enhancement, 4-Pin MX IRF7946TRPBF
- Infineon DirectFET N-Channel MOSFET 40 V DirectFET
- Infineon DirectFET N-Channel MOSFET 40 V DirectFET IRF7739L1TRPBF
- Infineon AUIRF N-Channel MOSFET 40 V Enhancement, 15-Pin DirectFET AUIRF8739L2TR
- Infineon AUIRF N-Channel MOSFET 40 V Enhancement, 15-Pin DirectFET
- Infineon DirectFET 375 A 15-Pin DirectFET
