Infineon HEXFET N-Channel MOSFET, 87 A, 30 V, 3-Pin TO-263 IRF3709ZSTRRPBF
- RS Stock No.:
- 214-4451
- Mfr. Part No.:
- IRF3709ZSTRRPBF
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
SGD24.80
(exc. GST)
SGD27.00
(inc. GST)
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- 290 left, ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD2.48 | SGD24.80 |
| 20 - 90 | SGD2.274 | SGD22.74 |
| 100 - 240 | SGD2.10 | SGD21.00 |
| 250 - 490 | SGD1.948 | SGD19.48 |
| 500 + | SGD1.894 | SGD18.94 |
*price indicative
- RS Stock No.:
- 214-4451
- Mfr. Part No.:
- IRF3709ZSTRRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 87A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.8mΩ | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Power Dissipation Pd | 79W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 87A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.8mΩ | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Power Dissipation Pd 79W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon HEXFET MOSFET is optimized for low RDS(on) and high current capability. It is ideal for low frequency applications requiring performance and ruggedness
It has product qualification according to JEDEC standard
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