Infineon HEXFET Type N-Channel MOSFET, 180 A, 40 V, 3-Pin TO-263

This image is representative of the product range

Subtotal (1 reel of 800 units)*

SGD1,250.40

(exc. GST)

SGD1,363.20

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 2,400 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
800 +SGD1.563SGD1,250.40

*price indicative

RS Stock No.:
214-4441
Mfr. Part No.:
IRF1404ZSTRLPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.7mΩ

Maximum Power Dissipation Pd

200W

Typical Gate Charge Qg @ Vgs

150nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche

It is lead-free

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy