Infineon 600V CoolMOS P7 N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 IPW60R037P7XKSA1
- RS Stock No.:
- 214-4430
- Mfr. Part No.:
- IPW60R037P7XKSA1
- Manufacturer:
- Infineon
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SGD237.90
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SGD259.20
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Units | Per unit | Per Tube* | Saving |
|---|---|---|---|
| 30 - 60 | SGD7.93 | SGD237.90 | - |
| 90 - 120 | SGD7.692 | SGD230.76 | SGD21.42 |
| 150 - 270 | SGD7.385 | SGD221.55 | SGD81.75 |
| 300 - 570 | SGD7.016 | SGD210.48 | SGD274.20 |
| 600 + | SGD6.595 | SGD197.85 | SGD801.00 |
*price indicative
- RS Stock No.:
- 214-4430
- Mfr. Part No.:
- IPW60R037P7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | 600V CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 37mΩ | |
| Maximum Gate Source Voltage Vgs | 4V | |
| Typical Gate Charge Qg @ Vgs | 121nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 255W | |
| Forward Voltage Vf | 900mV | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series 600V CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 37mΩ | ||
Maximum Gate Source Voltage Vgs 4V | ||
Typical Gate Charge Qg @ Vgs 121nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 255W | ||
Forward Voltage Vf 900mV | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.
It has rugged body diode
Integrated RG reduces MOSFET oscillation sensitivity
Related links
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- Infineon 600V CoolMOS P7 N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 IPD60R180P7ATMA1
- Infineon 600V CoolMOS P7 N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R180P7XKSA1