Infineon 600V CoolMOS G7 SJ Type N-Channel MOSFET, 23 A, 600 V Enhancement, 8-Pin HSOF IPT60R102G7XTMA1
- RS Stock No.:
- 214-4426
- Mfr. Part No.:
- IPT60R102G7XTMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD35.23
(exc. GST)
SGD38.40
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 1,510 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | SGD7.046 | SGD35.23 |
| 10 - 95 | SGD6.458 | SGD32.29 |
| 100 - 245 | SGD5.964 | SGD29.82 |
| 250 - 495 | SGD5.536 | SGD27.68 |
| 500 + | SGD5.384 | SGD26.92 |
*price indicative
- RS Stock No.:
- 214-4426
- Mfr. Part No.:
- IPT60R102G7XTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | HSOF | |
| Series | 600V CoolMOS G7 SJ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 102mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 141W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.1mm | |
| Height | 2.4mm | |
| Width | 10.58 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type HSOF | ||
Series 600V CoolMOS G7 SJ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 102mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 141W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.1mm | ||
Height 2.4mm | ||
Width 10.58 mm | ||
Automotive Standard No | ||
This Infineon 600V Cool MOS G7 SJ MOSFET brings together the benefits of the improved 600V Cool MOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC)
It enables best-in-class R DS(on) in smallest footprint
It has provided production cost reduction
Related links
- Infineon 600V CoolMOS G7 SJ Type N-Channel MOSFET 600 V Enhancement, 8-Pin HSOF
- Infineon CoolMOS P7 SJ Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-251 IPU95R3K7P7AKMA1
- Infineon CoolMOS P7 SJ Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-251
- Infineon C7 GOLD Type N-Channel MOSFET 650 V Enhancement, 8-Pin HSOF
- Infineon C7 GOLD Type N-Channel MOSFET 650 V Enhancement, 8-Pin HSOF IPT60R150G7XTMA1
- Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET 650 V Enhancement, 5-Pin ThinPAK
- Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK