Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-220 IPP60R280P7XKSA1

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Subtotal (1 pack of 10 units)*

SGD18.62

(exc. GST)

SGD20.30

(inc. GST)

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Units
Per unit
Per Pack*
10 - 10SGD1.862SGD18.62
20 - 90SGD1.707SGD17.07
100 - 240SGD1.575SGD15.75
250 - 490SGD1.462SGD14.62
500 +SGD1.422SGD14.22

*price indicative

Packaging Options:
RS Stock No.:
214-4418
Mfr. Part No.:
IPP60R280P7XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

600V

Series

600V CoolMOS P7

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

25nC

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

72W

Maximum Operating Temperature

150°C

Length

10.2mm

Standards/Approvals

No

Height

4.4mm

Width

15.93 mm

Automotive Standard

No

The 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

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