Infineon OptiMOS 5 N-Channel MOSFET, 112 A, 150 V Enhancement, 3-Pin TO-220 IPP076N15N5AKSA1

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Subtotal (1 tube of 50 units)*

SGD235.20

(exc. GST)

SGD256.35

(inc. GST)

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Units
Per unit
Per Tube*
50 - 100SGD4.704SGD235.20
150 - 200SGD4.63SGD231.50
250 - 450SGD4.508SGD225.40
500 - 950SGD4.271SGD213.55
1000 +SGD3.821SGD191.05

*price indicative

RS Stock No.:
214-4408
Mfr. Part No.:
IPP076N15N5AKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

112A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-220

Series

OptiMOS 5

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

7.6mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

214W

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

49nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.2mm

Height

4.4mm

Width

15.93mm

Automotive Standard

No

The 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

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