Infineon 700V CoolMOS P7 N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin TO-252 IPD70R360P7SAUMA1

RS Stock No.:: 214-4392
Mfr. Part No.:: IPD70R360P7SAUMA1
Manufacturer:: Infineon

Infineon 700V CoolMOS P7 N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin TO-252 IPD70R360P7SAUMA1

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Subtotal (1 pack of 20 units)*

SGD27.00

(exc. GST)

SGD29.40

(inc. GST)

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Units	Per unit	Per Pack*
20 - 20	SGD1.35	SGD27.00
40 - 80	SGD1.237	SGD24.74
100 - 220	SGD1.143	SGD22.86
240 - 480	SGD1.062	SGD21.24
500 +	SGD1.032	SGD20.64

*price indicative

RS Stock No.:: 214-4392
Mfr. Part No.:: IPD70R360P7SAUMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	12.5A
	Maximum Drain Source Voltage Vds	700V
	Package Type	TO-252
	Series	700V CoolMOS P7
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	16V
	Forward Voltage Vf	900mV
	Typical Gate Charge Qg @ Vgs	16.4nC
	Maximum Power Dissipation Pd	59.5W
	Maximum Operating Temperature	150°C
	Width	6.42mm
	Standards/Approvals	No
	Length	6.65mm
	Height	2.35mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 12.5A
	Maximum Drain Source Voltage Vds 700V
	Package Type TO-252
	Series 700V CoolMOS P7
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 16V
	Forward Voltage Vf 900mV
	Typical Gate Charge Qg @ Vgs 16.4nC
	Maximum Power Dissipation Pd 59.5W
	Maximum Operating Temperature 150°C
	Width 6.42mm
	Standards/Approvals No
	Length 6.65mm
	Height 2.35mm
	Automotive Standard No

Datasheet - IPD70R360P7SAUMA1

Infineon 700V CoolMOS P7 Series MOSFET, 700V Drain Source Voltage, 12.5A Continuous Drain Current - IPD70R360P7SAUMA1

This MOSFET is a high-voltage N-channel enhancement device designed for switch-mode power conversion and other power-handling roles. It is a surface-mount component intended for use where robust voltage blocking and switching capability are needed in compact assemblies. The device operates across a wide temperature range and supports typical gate-drive voltages for power electronics applications.

Features and Benefits:

• 700V blocking capability enables high-voltage designs
• 12.5A continuous drain current supports substantial load currents
• RDS(on) 360mΩ minimises conduction losses under load
• Power dissipation 59.5W allows sustained thermal handling
• Gate charge 16.4nC reduces switching energy losses
• VGS rating ±16V permits standard gate-drive margins

Applications

• Suitable for high-voltage SMPS primary switches
• Ideal for industrial power converter stages
• Used with flyback and forward topologies in supplies
• Can be used for power-factor-correction front ends
• Appropriate for high-voltage testing and lab setups

What thermal range can the device tolerate in operation?

It is specified to operate from -40°C up to 150°C, allowing use in demanding thermal environments.

What package should I expect for board layout considerations?

The part is supplied in a TO-252 surface-mount package with three pins for straightforward PCB footprint integration.

What is the forward conduction characteristic under switching?

The forward voltage is 0.9V which influences conduction-loss calculations during on-state operation.

How should gate-drive design account for switching behaviour?

Use the typical gate charge of 16.4nC to size driver current and switching timing for desired transition speeds.