Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

SGD1,895.00

(exc. GST)

SGD2,065.00

(inc. GST)

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Units
Per unit
Per Reel*
2500 - 2500SGD0.758SGD1,895.00
5000 - 5000SGD0.728SGD1,820.00
7500 +SGD0.719SGD1,797.50

*price indicative

RS Stock No.:
214-4387
Mfr. Part No.:
IPD60R360P7ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

600V CoolMOS P7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

13nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

41W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

6.42 mm

Height

2.35mm

Length

6.65mm

Automotive Standard

No

This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

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