Infineon OptiMOS 5 Type N-Channel MOSFET, 62 A, 100 V N, 8-Pin PQFN
- RS Stock No.:
- 214-4342
- Mfr. Part No.:
- BSZ096N10LS5ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 5000 units)*
SGD5,235.00
(exc. GST)
SGD5,705.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 5,000 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | SGD1.047 | SGD5,235.00 |
| 10000 - 10000 | SGD1.007 | SGD5,035.00 |
| 15000 + | SGD0.994 | SGD4,970.00 |
*price indicative
- RS Stock No.:
- 214-4342
- Mfr. Part No.:
- BSZ096N10LS5ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PQFN | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.5mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.4mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Width | 3.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PQFN | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.5mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3.4mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Width 3.4 mm | ||
Automotive Standard No | ||
This Infineon OptiMOS MOSFET offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
It is ideal for hot-swap and e-fuse applications
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