Infineon OptiMOS Type N-Channel MOSFET, 234 A, 60 V N, 8-Pin SuperSO BSC016N06NSTATMA1
- RS Stock No.:
- 214-4321
- Mfr. Part No.:
- BSC016N06NSTATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD21.61
(exc. GST)
SGD23.555
(inc. GST)
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Temporarily out of stock
- 5,000 unit(s) shipping from 05 January 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | SGD4.322 | SGD21.61 |
| 10 - 95 | SGD3.962 | SGD19.81 |
| 100 - 245 | SGD3.66 | SGD18.30 |
| 250 - 495 | SGD3.396 | SGD16.98 |
| 500 + | SGD3.304 | SGD16.52 |
*price indicative
- RS Stock No.:
- 214-4321
- Mfr. Part No.:
- BSC016N06NSTATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 234A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | SuperSO | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.6mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 139W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.35mm | |
| Height | 1.2mm | |
| Width | 6.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 234A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type SuperSO | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.6mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 139W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.35mm | ||
Height 1.2mm | ||
Width 6.1 mm | ||
Automotive Standard No | ||
This Infineon OptiMOS Power MOSFET offers high power density as well as improved robustness. It is optimized for synchronous rectification
It is Halogen-free according to IEC61249-2-21
Related links
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