Infineon OptiMOS N-Channel MOSFET, 195 A, 40 V, 8-Pin SuperSO BSC014N04LSIATMA1

RS Stock No.:: 214-4318
Mfr. Part No.:: BSC014N04LSIATMA1
Manufacturer:: Infineon

Infineon OptiMOS N-Channel MOSFET, 195 A, 40 V, 8-Pin SuperSO BSC014N04LSIATMA1

This image is representative of the product range

Bulk discount available

View bulk pricing options

Subtotal (1 reel of 5000 units)*

SGD7,905.00

(exc. GST)

SGD8,615.00

(inc. GST)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Reel*
5000 - 5000	SGD1.581	SGD7,905.00
10000 - 10000	SGD1.52	SGD7,600.00
15000 +	SGD1.501	SGD7,505.00

*price indicative

RS Stock No.:: 214-4318
Mfr. Part No.:: BSC014N04LSIATMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	195A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SuperSO
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	2mΩ
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	55nC
	Maximum Power Dissipation Pd	96W
	Forward Voltage Vf	700mV
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	6.1mm
	Standards/Approvals	No
	Height	1.2mm
	Length	5.35mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 195A
	Maximum Drain Source Voltage Vds 40V
	Package Type SuperSO
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 2mΩ
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 55nC
	Maximum Power Dissipation Pd 96W
	Forward Voltage Vf 700mV
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 6.1mm
	Standards/Approvals No
	Height 1.2mm
	Length 5.35mm
	Automotive Standard No

Datasheet - BSC014N04LSIATMA1

Infineon OptiMOS Series MOSFET, 40V Maximum Drain Source Voltage, 195A Maximum Continuous Drain Current - BSC014N04LSIATMA1

This MOSFET is a high-current switching transistor designed for surface-mounted power applications where low conduction loss and robust thermal endurance are required. It operates across a wide temperature span and is suitable for demanding electronic environments that need efficient N-channel switching at moderate drain-source voltages.

Features and Benefits:

• Very low Rds(on) 2mΩ reduces conduction losses during high current
• Maximum continuous drain current 195A supports heavy loads
• Maximum power dissipation 96W enables sustained power handling
• Maximum drain-source voltage 40V allows moderate-voltage system use
• Typical gate charge 55nC provides predictable switching energy
• Maximum gate-source voltage 20V protects gate from overdrive

Applications

• Suitable for DC-DC converters in power distribution systems
• Ideal for motor-drive stages requiring high continuous current
• Used with battery-management modules needing low conduction loss
• Can be used for synchronous rectification in power supplies
• Appropriate for high-current load switching on PCBs

What thermal extremes can it tolerate in operation?

It is specified to operate from -55°C up to 150°C, allowing use in low-temperature and elevated-temperature environments without derating beyond device limits.

How does the package support PCB assembly and cooling?

The device is supplied in a SuperSO 8-pin surface-mount package with minimal mounting height to facilitate compact PCB layouts and efficient PCB-conduction cooling paths.

What type of conduction channel does it use and how does that affect switching?

It employs an N-channel topology, which offers low on-resistance for efficient conduction and conventional gate-drive polarity for common driver circuits.

What forward voltage performance can be expected during conduction?

The forward voltage is typically 0.7V under specified conditions, contributing to overall power-loss calculations in system design.