DiodesZetex Dual DMP2090UFDB 1 Type P-Channel MOSFET, 3.2 A, 20 V Enhancement, 6-Pin UDFN DMP2090UFDB-7
- RS Stock No.:
- 213-9199
- Mfr. Part No.:
- DMP2090UFDB-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Subtotal (1 pack of 100 units)*
SGD28.50
(exc. GST)
SGD31.10
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
- Plus 2,700 unit(s) shipping from 29 December 2025
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 100 | SGD0.285 | SGD28.50 |
| 200 - 200 | SGD0.28 | SGD28.00 |
| 300 - 400 | SGD0.274 | SGD27.40 |
| 500 - 900 | SGD0.253 | SGD25.30 |
| 1000 + | SGD0.228 | SGD22.80 |
*price indicative
- RS Stock No.:
- 213-9199
- Mfr. Part No.:
- DMP2090UFDB-7
- Manufacturer:
- DiodesZetex
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3.2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | UDFN | |
| Series | DMP2090UFDB | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.9Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.8nC | |
| Maximum Power Dissipation Pd | 1.39W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | -0.7V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | MIL-STD-202, RoHS, J-STD-020, UL 94V-0, AEC-Q101 | |
| Height | 0.57mm | |
| Width | 2 mm | |
| Length | 2mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q200, AEC-Q101, AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3.2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type UDFN | ||
Series DMP2090UFDB | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.9Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.8nC | ||
Maximum Power Dissipation Pd 1.39W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf -0.7V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals MIL-STD-202, RoHS, J-STD-020, UL 94V-0, AEC-Q101 | ||
Height 0.57mm | ||
Width 2 mm | ||
Length 2mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q200, AEC-Q101, AEC-Q100 | ||
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