DiodesZetex Dual DMG1023 1 Type P-Channel MOSFET, 1.03 A, 20 V Enhancement, 6-Pin SOT-563
- RS Stock No.:
- 206-0067
- Mfr. Part No.:
- DMG1023UVQ-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
SGD18.65
(exc. GST)
SGD20.35
(inc. GST)
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In Stock
- Plus 5,450 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | SGD0.373 | SGD18.65 |
| 100 - 200 | SGD0.355 | SGD17.75 |
| 250 - 450 | SGD0.337 | SGD16.85 |
| 500 - 950 | SGD0.32 | SGD16.00 |
| 1000 + | SGD0.304 | SGD15.20 |
*price indicative
- RS Stock No.:
- 206-0067
- Mfr. Part No.:
- DMG1023UVQ-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.03A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-563 | |
| Series | DMG1023 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Forward Voltage Vf | -0.8V | |
| Maximum Power Dissipation Pd | 530W | |
| Typical Gate Charge Qg @ Vgs | 622.4nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | No | |
| Width | 1.2 mm | |
| Height | 0.6mm | |
| Length | 1.6mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.03A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-563 | ||
Series DMG1023 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Forward Voltage Vf -0.8V | ||
Maximum Power Dissipation Pd 530W | ||
Typical Gate Charge Qg @ Vgs 622.4nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals No | ||
Width 1.2 mm | ||
Height 0.6mm | ||
Length 1.6mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 20V complementary pair enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 6 V with 0.53W thermal power dissipation.
Low input capacitance
Fast switching speed
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