DiodesZetex Dual DMN53D0LDWQ 1 Type N-Channel MOSFET, 460 mA, 50 V Enhancement, 3-Pin SOT-363
- RS Stock No.:
- 213-9190
- Mfr. Part No.:
- DMN53D0LDWQ-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Subtotal (1 reel of 3000 units)*
SGD480.00
(exc. GST)
SGD510.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
- Plus 3,000 unit(s) shipping from 29 December 2025
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 6000 | SGD0.16 | SGD480.00 |
| 9000 - 12000 | SGD0.154 | SGD462.00 |
| 15000 + | SGD0.144 | SGD432.00 |
*price indicative
- RS Stock No.:
- 213-9190
- Mfr. Part No.:
- DMN53D0LDWQ-7
- Manufacturer:
- DiodesZetex
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 460mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-363 | |
| Series | DMN53D0LDWQ | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.0016Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 310W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Length | 2.15mm | |
| Standards/Approvals | J-STD-020, RoHS, MIL-STD-202, UL 94V-0, AEC-Q101 | |
| Height | 0.95mm | |
| Width | 1.35 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q200, AEC-Q100, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 460mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-363 | ||
Series DMN53D0LDWQ | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.0016Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 310W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Length 2.15mm | ||
Standards/Approvals J-STD-020, RoHS, MIL-STD-202, UL 94V-0, AEC-Q101 | ||
Height 0.95mm | ||
Width 1.35 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101 | ||
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