DiodesZetex Dual DMN3190LDWQ 1 Type N-Channel MOSFET, 1 A, 30 V Enhancement, 6-Pin SOT-363 DMN3190LDWQ-7
- RS Stock No.:
- 213-9186
- Mfr. Part No.:
- DMN3190LDWQ-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Subtotal (1 pack of 50 units)*
SGD23.10
(exc. GST)
SGD25.20
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
- Plus 17,600 unit(s) shipping from 29 December 2025
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | SGD0.462 | SGD23.10 |
| 100 - 200 | SGD0.404 | SGD20.20 |
| 250 - 450 | SGD0.396 | SGD19.80 |
| 500 - 950 | SGD0.359 | SGD17.95 |
| 1000 + | SGD0.323 | SGD16.15 |
*price indicative
- RS Stock No.:
- 213-9186
- Mfr. Part No.:
- DMN3190LDWQ-7
- Manufacturer:
- DiodesZetex
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-363 | |
| Series | DMN3190LDWQ | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.19Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 0.4W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 0.9nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | UL 94V-0, AEC-Q101, RoHS, MIL-STD-202, J-STD-020 | |
| Width | 2.1 mm | |
| Height | 0.95mm | |
| Length | 2.15mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-363 | ||
Series DMN3190LDWQ | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.19Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 0.4W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 0.9nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals UL 94V-0, AEC-Q101, RoHS, MIL-STD-202, J-STD-020 | ||
Width 2.1 mm | ||
Height 0.95mm | ||
Length 2.15mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
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