DiodesZetex Dual DMN3006SCA6 1 Type N-Channel MOSFET, 13 A, 30 V Enhancement, 6-Pin X4-DSN DMN3006SCA6-7
- RS Stock No.:
- 213-9171
- Mfr. Part No.:
- DMN3006SCA6-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Subtotal (1 pack of 10 units)*
SGD21.38
(exc. GST)
SGD23.30
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
- 3,000 unit(s) ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | SGD2.138 | SGD21.38 |
| 50 - 90 | SGD2.098 | SGD20.98 |
| 100 - 240 | SGD1.87 | SGD18.70 |
| 250 - 990 | SGD1.832 | SGD18.32 |
| 1000 + | SGD1.496 | SGD14.96 |
*price indicative
- RS Stock No.:
- 213-9171
- Mfr. Part No.:
- DMN3006SCA6-7
- Manufacturer:
- DiodesZetex
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMN3006SCA6 | |
| Package Type | X4-DSN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.0048Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.95V | |
| Typical Gate Charge Qg @ Vgs | 17.7nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | UL 94V-0, AEC-Q101, RoHS, MIL-STD-202, J-STD-020 | |
| Length | 3.5mm | |
| Height | 0.11mm | |
| Width | 1.9 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMN3006SCA6 | ||
Package Type X4-DSN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.0048Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.95V | ||
Typical Gate Charge Qg @ Vgs 17.7nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.8W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals UL 94V-0, AEC-Q101, RoHS, MIL-STD-202, J-STD-020 | ||
Length 3.5mm | ||
Height 0.11mm | ||
Width 1.9 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
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