Vishay SiRA74DP Type N-Channel MOSFET, 81.2 A, 40 V Enhancement, 8-Pin SO-8 SiRA74DP-T1-GE3
- RS Stock No.:
- 210-5009
- Mfr. Part No.:
- SiRA74DP-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD11.86
(exc. GST)
SGD12.93
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 5,340 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD1.186 | SGD11.86 |
| 20 - 90 | SGD1.127 | SGD11.27 |
| 100 - 490 | SGD1.07 | SGD10.70 |
| 500 - 990 | SGD1.016 | SGD10.16 |
| 1000 + | SGD0.965 | SGD9.65 |
*price indicative
- RS Stock No.:
- 210-5009
- Mfr. Part No.:
- SiRA74DP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 81.2A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | SiRA74DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 46.2W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Length | 6.25mm | |
| Width | 5.26 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 81.2A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series SiRA74DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 46.2W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Length 6.25mm | ||
Width 5.26 mm | ||
Automotive Standard No | ||
The Vishay N-Channel 40 V (D-S) 150 °C MOSFET has PowerPAK SO-8 package type.
TrenchFET Gen IV power MOSFET
Tuned for the lowest RDS-Qoss FOM
100 % Rg and UIS tested
Qgd/Qgs ratio < 1 optimizes switching characteristics
Optimized for wave soldering
Flexible leads increase resilience to board flexing
Related links
- Vishay SiRA74DP Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay SiSS26LDN Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212 SISS26LDN-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8 SIJA74DP-T1-GE3
- Vishay SiSS26LDN Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212
- Vishay Dual N Channel Mosfet TrenchFET 2 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212
- Vishay ThunderFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212 SIS468DN-T1-GE3
- Vishay SiSS32ADN Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212 SiSS32ADN-T1-GE3