Vishay E Type N-Channel Power MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-247AC SIHG17N80AE-GE3
- RS Stock No.:
- 210-4986
- Mfr. Part No.:
- SIHG17N80AE-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
SGD22.94
(exc. GST)
SGD25.005
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 1,475 unit(s) shipping from 22 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | SGD4.588 | SGD22.94 |
| 10 - 95 | SGD4.426 | SGD22.13 |
| 100 - 245 | SGD4.206 | SGD21.03 |
| 250 - 495 | SGD3.996 | SGD19.98 |
| 500 + | SGD3.796 | SGD18.98 |
*price indicative
- RS Stock No.:
- 210-4986
- Mfr. Part No.:
- SIHG17N80AE-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-247AC | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 179W | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 35.3mm | |
| Height | 4.83mm | |
| Width | 15.66mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-247AC | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 179W | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 35.3mm | ||
Height 4.83mm | ||
Width 15.66mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Maximum Drain Source Voltage, 15A Maximum Continuous Drain Current - SIHG17N80AE-GE3
This power MOSFET is a high-voltage switching transistor designed for through-hole mounting in industrial power electronics. It operates as an N-channel enhancement device and is intended for applications requiring substantial voltage headroom and moderate continuous current, providing a robust semiconductor solution for switching and power-conversion roles.
Features and Benefits:
• 800V maximum drain-source voltage enables high-voltage switching
• 15A continuous drain current supports sustained load duty
• 250mΩ maximum Rds(on) reduces conduction losses
• 179W power dissipation allows significant thermal handling
• 41nC typical gate charge enables predictable switching behaviour
• 30V gate-source limit permits standard gate-drive voltages
• 15A continuous drain current supports sustained load duty
• 250mΩ maximum Rds(on) reduces conduction losses
• 179W power dissipation allows significant thermal handling
• 41nC typical gate charge enables predictable switching behaviour
• 30V gate-source limit permits standard gate-drive voltages
Applications
• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial inverter stages and motor drive front ends
• Used for power-factor correction circuits in mains equipment
• Can be used for isolated high-voltage converters
• Suitable for laboratory test rigs requiring through-hole components
• Ideal for industrial inverter stages and motor drive front ends
• Used for power-factor correction circuits in mains equipment
• Can be used for isolated high-voltage converters
• Suitable for laboratory test rigs requiring through-hole components
What package type is provided for prototyping and heat-sinking?
The device is supplied in a TO-247AC through-hole package that facilitates robust mounting and attachment of standard heatsinks for thermal management.
What junction temperature range can be expected during operation?
The component is rated to operate up to a maximum temperature of 150°C with a minimum specified limit of -55°C for storage and low-temperature operation.
How does its gate-charge specification affect switching design?
A typical gate charge of 41nC at rated gate drive allows designers to estimate gate-drive energy and select suitable drivers to balance switching speed and EMI.
What mounting and pin-count considerations apply to circuit layout?
The part uses a three-pin through-hole format, enabling secure board fixation and straightforward connection in conventional power layouts.
Related links
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 SIHP17N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB17N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247 SIHG11N80AE-GE3