Vishay E N-Channel Power MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-247AC SIHG17N80AE-GE3

RS Stock No.:: 210-4986
Mfr. Part No.:: SIHG17N80AE-GE3
Manufacturer:: Vishay

Vishay E N-Channel Power MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-247AC SIHG17N80AE-GE3

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Subtotal (1 pack of 5 units)*

SGD29.82

(exc. GST)

SGD32.51

(inc. GST)

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Units	Per unit	Per Pack*
5 - 5	SGD5.964	SGD29.82
10 - 95	SGD5.754	SGD28.77
100 - 245	SGD5.468	SGD27.34
250 - 495	SGD5.194	SGD25.97
500 +	SGD4.934	SGD24.67

*price indicative

RS Stock No.:: 210-4986
Mfr. Part No.:: SIHG17N80AE-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	15A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-247AC
	Series	E
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	250mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	41nC
	Maximum Power Dissipation Pd	179W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Width	15.66mm
	Standards/Approvals	RoHS
	Height	4.83mm
	Length	35.3mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 15A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-247AC
	Series E
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 250mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 41nC
	Maximum Power Dissipation Pd 179W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Width 15.66mm
	Standards/Approvals RoHS
	Height 4.83mm
	Length 35.3mm
	Automotive Standard No

Datasheet - SIHG17N80AE-GE3

Vishay Series E Power MOSFET, 800V Maximum Drain Source Voltage, 15A Maximum Continuous Drain Current - SIHG17N80AE-GE3

This power MOSFET is a high-voltage switching transistor designed for demanding power-conversion environments. It operates as an enhancement-mode N-channel device and is intended for through-hole mounting in applications requiring robust high-voltage handling and significant continuous current capability. The component meets RoHS requirements and functions across a wide ambient temperature range.

Features and Benefits:

• 800V drain-source rating enables high-voltage system operation
• 15A continuous drain current supports substantial load currents
• 250mΩ RDS(on) yields reduced conduction losses under load
• 179W maximum power dissipation allows high-power switching
• 41nC typical gate charge facilitates predictable switching behaviour
• 30V maximum gate-source tolerance protects against gate overdrive

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for switch-mode power electronics designs
• Used with flyback and boost converter topologies
• Can be used for industrial motor-drive switch stages
• Suitable for high-voltage laboratory and test equipment

What temperature range can it tolerate during operation?

It is specified to function from -55°C up to 150°C, enabling use in both cold-start and elevated-heat environments.

Which package type and mounting style does it use?

The device is supplied in a TO-247AC package and is designed for through-hole PCB mounting for secure mechanical and thermal connection.

How does the forward voltage affect conduction?

The forward voltage of 1.2V indicates the on-state voltage drop under conduction conditions, which factors into thermal design and power-loss calculations.

Is it suitable for automotive qualification testing?

It is not designated as automotive standard

suitability for vehicle use should be evaluated against the required automotive specifications.