Vishay E Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 210-4981
- Mfr. Part No.:
- SIHG11N80AE-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 25 units)*
SGD75.05
(exc. GST)
SGD81.80
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- 1,500 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | SGD3.002 | SGD75.05 |
| 50 - 75 | SGD2.902 | SGD72.55 |
| 100 + | SGD2.708 | SGD67.70 |
*price indicative
- RS Stock No.:
- 210-4981
- Mfr. Part No.:
- SIHG11N80AE-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | E | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 391mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 78W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 45.3mm | |
| Standards/Approvals | No | |
| Width | 15.5 mm | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series E | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 391mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 78W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Operating Temperature 150°C | ||
Length 45.3mm | ||
Standards/Approvals No | ||
Width 15.5 mm | ||
Height 4.83mm | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET has TO-247AC package type with single configuration.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection
Related links
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- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247
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- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263