DiodesZetex DMN62 Type N-Channel MOSFET, 400 mA, 60 V Enhancement, 3-Pin SOT-323 DMN62D0UWQ-7
- RS Stock No.:
- 206-0092
- Mfr. Part No.:
- DMN62D0UWQ-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
SGD303.00
(exc. GST)
SGD330.00
(inc. GST)
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In Stock
- Plus 3,000 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 6000 | SGD0.101 | SGD303.00 |
| 9000 - 21000 | SGD0.098 | SGD294.00 |
| 24000 - 42000 | SGD0.095 | SGD285.00 |
| 45000 + | SGD0.092 | SGD276.00 |
*price indicative
- RS Stock No.:
- 206-0092
- Mfr. Part No.:
- DMN62D0UWQ-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 400mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMN62 | |
| Package Type | SOT-323 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 0.5nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 320mW | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.8 mm | |
| Standards/Approvals | No | |
| Length | 2mm | |
| Height | 0.9mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 400mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMN62 | ||
Package Type SOT-323 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 0.5nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 320mW | ||
Maximum Operating Temperature 150°C | ||
Width 1.8 mm | ||
Standards/Approvals No | ||
Length 2mm | ||
Height 0.9mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 60V N channel enhancement mode MOSFET is designed to meet the stringent requirements of automotive application. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in motor control and backlighting.
Low on-resistance
Low input capacitance
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