onsemi NBTLS Type N-Channel MOSFET, 187 A, 150 V Enhancement, 8-Pin MO-299A NTBLS4D0N15MC
- RS Stock No.:
- 205-2452
- Mfr. Part No.:
- NTBLS4D0N15MC
- Manufacturer:
- onsemi
This image is representative of the product range
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Subtotal (1 pack of 2 units)*
SGD9.54
(exc. GST)
SGD10.40
(inc. GST)
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Limited stock
- Plus 1,980 left, shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD4.77 | SGD9.54 |
| 10 - 98 | SGD4.625 | SGD9.25 |
| 100 - 498 | SGD4.485 | SGD8.97 |
| 500 - 998 | SGD4.35 | SGD8.70 |
| 1000 + | SGD4.22 | SGD8.44 |
*price indicative
- RS Stock No.:
- 205-2452
- Mfr. Part No.:
- NTBLS4D0N15MC
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 187A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | NBTLS | |
| Package Type | MO-299A | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 316W | |
| Typical Gate Charge Qg @ Vgs | 90.4nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.2 mm | |
| Length | 11.58mm | |
| Height | 2.2mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 187A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series NBTLS | ||
Package Type MO-299A | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 316W | ||
Typical Gate Charge Qg @ Vgs 90.4nC | ||
Maximum Operating Temperature 150°C | ||
Width 9.2 mm | ||
Length 11.58mm | ||
Height 2.2mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor single N-Channel MOSFET has a drain to source voltage rating of 150V and a continuous drain current rating of 187A. This devices is Pb-Free, Halogen Free/BFR Free and are RoHS compliant.
Drain to source on resistance is 4.4mohm
Low RDS(on) to minimize conduction losses
Low QG and capacitance to minimize driver losses
Lowers Switching Noise/EMI
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