STMicroelectronics N-Channel STL160 Type N-Channel MOSFET, 160 A, 60 V Enhancement, 8-Pin PowerFLAT STL160N6LF7
- RS Stock No.:
- 358-982
- Mfr. Part No.:
- STL160N6LF7
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Subtotal (1 reel of 3000 units)*
SGD3,465.00
(exc. GST)
SGD3,777.00
(inc. GST)
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- Shipping from 30 June 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | SGD1.155 | SGD3,465.00 |
*price indicative
- RS Stock No.:
- 358-982
- Mfr. Part No.:
- STL160N6LF7
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Operating Frequency | 1 MHz | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 160A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Output Power | 125W | |
| Package Type | PowerFLAT | |
| Series | STL160 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | N-Channel | |
| Standards/Approvals | JEDEC | |
| Width | 6.1 mm | |
| Length | 4.8mm | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Operating Frequency 1 MHz | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 160A | ||
Maximum Drain Source Voltage Vds 60V | ||
Output Power 125W | ||
Package Type PowerFLAT | ||
Series STL160 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration N-Channel | ||
Standards/Approvals JEDEC | ||
Width 6.1 mm | ||
Length 4.8mm | ||
Height 0.9mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel Power MOSFET, based on STripFET F7 technology, delivers exceptionally low on-state resistance (RDS(on)) for enhanced efficiency. Its design ensures reduced capacitance and gate charge, enabling Faster and more efficient switching with excellent EMI immunity.
Excellent FoM
Low Crss by Ciss ratio for EMI immunity
High avalanche ruggedness
Logic level VGS
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