STMicroelectronics N-Channel STL160 N-Channel MOSFET, 160 A, 60 V Enhancement, 8-Pin PowerFLAT STL160N6LF7
- RS Stock No.:
- 358-984
- Mfr. Part No.:
- STL160N6LF7
- Manufacturer:
- STMicroelectronics
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Units | Per unit |
|---|---|
| 1 - 9 | SGD3.05 |
| 10 - 99 | SGD2.76 |
| 100 - 499 | SGD2.54 |
| 500 - 999 | SGD2.35 |
| 1000 + | SGD2.11 |
*price indicative
- RS Stock No.:
- 358-984
- Mfr. Part No.:
- STL160N6LF7
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Operating Frequency | 1MHz | |
| Maximum Continuous Drain Current Id | 160A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Output Power | 125W | |
| Series | STL160 | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | N-Channel | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC | |
| Height | 0.9mm | |
| Width | 6.1mm | |
| Length | 4.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Operating Frequency 1MHz | ||
Maximum Continuous Drain Current Id 160A | ||
Maximum Drain Source Voltage Vds 60V | ||
Output Power 125W | ||
Series STL160 | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration N-Channel | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC | ||
Height 0.9mm | ||
Width 6.1mm | ||
Length 4.8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel Power MOSFET, based on STripFET F7 technology, delivers exceptionally low on-state resistance (RDS(on)) for enhanced efficiency. Its design ensures reduced capacitance and gate charge, enabling Faster and more efficient switching with excellent EMI immunity.
Excellent FoM
Low Crss by Ciss ratio for EMI immunity
High avalanche ruggedness
Logic level VGS
Related links
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