onsemi NTMFS006N08MC Type N-Channel MOSFET, 32 A, 80 V Enhancement, 8-Pin PQFN
- RS Stock No.:
- 205-2424
- Mfr. Part No.:
- NTMFS006N08MC
- Manufacturer:
- onsemi
This image is representative of the product range
Subtotal (1 reel of 3000 units)*
SGD4,584.00
(exc. GST)
SGD4,998.00
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | SGD1.528 | SGD4,584.00 |
*price indicative
- RS Stock No.:
- 205-2424
- Mfr. Part No.:
- NTMFS006N08MC
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PQFN | |
| Series | NTMFS006N08MC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 78W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PQFN | ||
Series NTMFS006N08MC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 78W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.1mm | ||
Automotive Standard No | ||
The ON Semiconductor Power Trench series 150V N-Channel MV MOSFET is produced using advanced process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Max rDS(on) = 11.5mohm at VGS is 10V, ID is 35A
Low Conduction Loss
Max rDS(on) is 13.2mohm at VGS is 8V, ID is 18A
50% lower Qrr than other mosfet suppliers
Lowers switching noise /EMI
MSL1 robust package design
100% UIL tested
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