onsemi FDMC Type N-Channel MOSFET, 22 A, 80 V Enhancement, 8-Pin PQFN FDMC007N08LCDC
- RS Stock No.:
- 178-4558
- Mfr. Part No.:
- FDMC007N08LCDC
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD23.37
(exc. GST)
SGD25.47
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 2,960 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | SGD2.337 | SGD23.37 |
| 100 - 490 | SGD2.267 | SGD22.67 |
| 500 - 990 | SGD2.199 | SGD21.99 |
| 1000 + | SGD2.133 | SGD21.33 |
*price indicative
- RS Stock No.:
- 178-4558
- Mfr. Part No.:
- FDMC007N08LCDC
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | FDMC | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 57W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 3.4 mm | |
| Length | 3.4mm | |
| Height | 0.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series FDMC | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 57W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 3.4 mm | ||
Length 3.4mm | ||
Height 0.75mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on on-state resistance and yet maintain in class soft body diode
Shielded Gate MOSFET Technology
Max rDS(on) = 6.8 mΩ at VGS = 10 V, ID = 21 A
Max rDS(on) = 11.1 mΩ at VGS = 4.5 V, ID = 17 A
5 V Drive Capable
50% lower Qrr than other MOSFET suppliers
Lowers switching noise/EMI
MSL1 robust package design
Dualcool capable package
Applications
Primary DC−DC MOSFET
Synchronous Rectifier in DC−DC and AC−DC
Motor Drive
Solar
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