onsemi N-Channel MOSFET, 224 A, 60 V Enhancement, 8-Pin PQFN NVMFSC1D6N06CL
- RS Stock No.:
- 195-2675
- Mfr. Part No.:
- NVMFSC1D6N06CL
- Manufacturer:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (10 units, in packs of 10)*
SGD58.90
(exc. GST)
SGD64.20
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 710 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | SGD5.89 | SGD58.90 |
| 100 - 490 | SGD5.714 | SGD57.14 |
| 500 - 990 | SGD5.542 | SGD55.42 |
| 1000 - 1490 | SGD5.376 | SGD53.76 |
| 1500 + | SGD5.216 | SGD52.16 |
*price indicative
- RS Stock No.:
- 195-2675
- Mfr. Part No.:
- NVMFSC1D6N06CL
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 224A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 166W | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 950μm | |
| Length | 5.9mm | |
| Width | 5mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 224A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 166W | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 950μm | ||
Length 5.9mm | ||
Width 5mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm flat lead, dual cool package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
PPAP Capable
Application
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Reverser Battery protection
Switching power supplies
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