N-Channel MOSFET, 133 A, 60 V, 4-Pin LFPAK, SOT-669 onsemi NVMYS3D3N06CLTWG

RS Stock No.:: 195-2512
Mfr. Part No.:: NVMYS3D3N06CLTWG
Manufacturer:: onsemi

N-Channel MOSFET, 133 A, 60 V, 4-Pin LFPAK, SOT-669 onsemi NVMYS3D3N06CLTWG

Price Each (On a Reel of 3000)

SGD1.116

(exc. GST)

SGD1.216

(inc. GST)

2860 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Reel**
3000 +	SGD1.116	SGD3,348.00

**price indicative

RS Stock No.:: 195-2512
Mfr. Part No.:: NVMYS3D3N06CLTWG
Manufacturer:: onsemi

Datasheet NVMYS3D3N06CLTWG

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	133 A
Maximum Drain Source Voltage	60 V
Package Type	LFPAK, SOT-669
Mounting Type	Surface Mount
Pin Count	4
Maximum Drain Source Resistance	4.2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	100 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20 V
Length	5mm
Typical Gate Charge @ Vgs	40.7 @ 10 V nC
Width	4.25mm
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Height	1.15mm
Automotive Standard	AEC-Q101
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V

N-Channel MOSFET, 133 A, 60 V, 4-Pin LFPAK, SOT-669 onsemi NVMYS3D3N06CLTWG

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