onsemi NVMYS3D3N06CL N-Channel MOSFET, 133 A, 60 V Enhancement, 4-Pin LFPAK NVMYS3D3N06CLTWG

This image is representative of the product range

View all MOSFETs
Bulk discount available
View bulk pricing options

Subtotal (1 pack of 20 units)*

SGD35.50

(exc. GST)

SGD38.70

(inc. GST)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per unit
Per Pack*
20 - 80SGD1.775SGD35.50
100 - 480SGD1.614SGD32.28
500 - 980SGD1.502SGD30.04
1000 - 1480SGD1.482SGD29.64
1500 +SGD1.464SGD29.28

*price indicative

Packaging Options:
RS Stock No.:
195-2513
Mfr. Part No.:
NVMYS3D3N06CLTWG
Manufacturer:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

133A

Maximum Drain Source Voltage Vds

60V

Package Type

LFPAK

Series

NVMYS3D3N06CL

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

4.2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

100W

Typical Gate Charge Qg @ Vgs

40.7nC

Maximum Operating Temperature

175°C

Length

5mm

Height

1.15mm

Standards/Approvals

No

Width

4.25mm

Automotive Standard

AEC-Q101

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK4 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free

Related links