STMicroelectronics N-Channel MOSFET, 7 A, 710 V Enhancement, 3-Pin TO-252 STD8N65M5
- RS Stock No.:
- 188-8467
- Mfr. Part No.:
- STD8N65M5
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
SGD23.50
(exc. GST)
SGD25.60
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD4.70 | SGD23.50 |
| 50 - 95 | SGD4.468 | SGD22.34 |
| 100 - 245 | SGD4.244 | SGD21.22 |
| 250 - 995 | SGD4.03 | SGD20.15 |
| 1000 + | SGD3.832 | SGD19.16 |
*price indicative
- RS Stock No.:
- 188-8467
- Mfr. Part No.:
- STD8N65M5
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 710V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 70W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Width | 6.2mm | |
| Height | 2.17mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 710V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Gate Source Voltage Vgs 25V | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 70W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Width 6.2mm | ||
Height 2.17mm | ||
Automotive Standard No | ||
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Worldwide best RDS(on) area
Higher VDSSrating
High dv/dt capability
Excellent switching performance
Easy to drive
Applications
Switching applications
Related links
- STMicroelectronics N-Channel MOSFET 710 V Enhancement, 3-Pin TO-252 STD8N65M5
- STMicroelectronics N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 STD11N65M2
- STMicroelectronics MDmesh M5 N-Channel MOSFET 710 V Enhancement, 3-Pin TO-252 STD15N65M5
- STMicroelectronics MDmesh M5 N-Channel MOSFET 710 V Enhancement, 3-Pin TO-252 STD18N65M5
- STMicroelectronics N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 STB43N65M5
- STMicroelectronics N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 STD80N340K6
- STMicroelectronics N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 STD11N60DM2
- STMicroelectronics N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD15N60DM6