STMicroelectronics Type N-Channel MOSFET, 7 A, 650 V Enhancement, 3-Pin TO-263

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 1000 units)*

SGD10,625.00

(exc. GST)

SGD11,581.00

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 29 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
1000 - 1000SGD10.625SGD10,625.00
2000 +SGD10.247SGD10,247.00

*price indicative

RS Stock No.:
188-8283
Mfr. Part No.:
STB43N65M5
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

630mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

70W

Typical Gate Charge Qg @ Vgs

15nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Width

9.35 mm

Height

4.37mm

Standards/Approvals

No

Length

10.4mm

Automotive Standard

AEC-Q101

This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.

Extremely low RDS(on)

Low gate charge and input capacitance

Excellent switching performance

Applications

Switching applications

Related links