STMicroelectronics Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

SGD2,250.00

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SGD2,450.00

(inc. GST)

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Per Reel*
1000 - 1000SGD2.25SGD2,250.00
2000 - 4000SGD2.226SGD2,226.00
5000 - 9000SGD2.166SGD2,166.00
10000 - 19000SGD2.049SGD2,049.00
20000 +SGD1.827SGD1,827.00

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RS Stock No.:
188-8284
Mfr. Part No.:
STB80NF55-06T4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

300W

Typical Gate Charge Qg @ Vgs

142nC

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

9.35 mm

Length

10.4mm

Standards/Approvals

No

Height

4.37mm

Automotive Standard

No

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Exceptional dv/dt capability

Application oriented characterization

Applications

Switching application

Applications

Switching application

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