N-Channel MOSFET, 181.8 A, 30 V, 8-Pin PowerPAK 1212-8S Vishay SISS60DN-T1-GE3

RS Stock No.:: 188-4904
Mfr. Part No.:: SISS60DN-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 181.8 A, 30 V, 8-Pin PowerPAK 1212-8S Vishay SISS60DN-T1-GE3

Price Each (On a Reel of 3000)

SGD0.956

(exc. GST)

SGD1.042

(inc. GST)

Temporarily out of stock - back order for despatch 03/03/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Reel**
3000 +	SGD0.956	SGD2,868.00

**price indicative

RS Stock No.:: 188-4904
Mfr. Part No.:: SISS60DN-T1-GE3
Manufacturer:: Vishay

Datasheet SISS60DN-T1-GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	181.8 A
Maximum Drain Source Voltage	30 V
Package Type	PowerPAK 1212-8S
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	2.01 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	65.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-12 V, +16 V
Number of Elements per Chip	1
Width	3.3mm
Typical Gate Charge @ Vgs	57 nC @ 10 V
Maximum Operating Temperature	+150 °C
Length	3.3mm
Height	0.78mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	0.68V

N-Channel MOSFET, 181.8 A, 30 V, 8-Pin PowerPAK 1212-8S Vishay SISS60DN-T1-GE3

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