Vishay SiS N-Channel MOSFET, 198 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISD5300DN-T1-GE3

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SGD3.11

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SGD3.39

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Per unit
1 - 9SGD3.11
10 - 24SGD2.01
25 - 99SGD1.04
100 - 499SGD1.03
500 +SGD1.01

*price indicative

RS Stock No.:
735-152
Mfr. Part No.:
SISD5300DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

198A

Maximum Drain Source Voltage Vds

30V

Series

SiS

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00087Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

57W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

59nC

Maximum Gate Source Voltage Vgs

16V

Forward Voltage Vf

30V

Maximum Operating Temperature

150°C

Length

4mm

Width

4mm

Standards/Approvals

RoHS

Height

1mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

94A continuous drain current at TA=25°C

54.3nC typical total gate charge for fast switching

-55°C to +175°C extended junction temperature range

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