Vishay E Type N-Channel Power MOSFET, 30 A, 600 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 188-4870
- Mfr. Part No.:
- SIHA100N60E-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionSubtotal (1 tube of 50 units)*
SGD216.45
(exc. GST)
SGD235.95
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 950 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | SGD4.329 | SGD216.45 |
| 100 - 200 | SGD4.20 | SGD210.00 |
| 250 - 450 | SGD4.032 | SGD201.60 |
| 500 - 950 | SGD3.83 | SGD191.50 |
| 1000 + | SGD3.601 | SGD180.05 |
*price indicative
- RS Stock No.:
- 188-4870
- Mfr. Part No.:
- SIHA100N60E-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | E | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 35W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.3mm | |
| Height | 15.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series E | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 35W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.3mm | ||
Height 15.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
E Series Power MOSFET.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Related links
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