Vishay E Type N-Channel Power MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 188-4870
- Mfr. Part No.:
- SIHA100N60E-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Subtotal (1 tube of 50 units)*
SGD216.45
(exc. GST)
SGD235.95
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
- 950 unit(s) ready to ship from another location
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | SGD4.329 | SGD216.45 |
| 100 - 200 | SGD4.20 | SGD210.00 |
| 250 - 450 | SGD4.032 | SGD201.60 |
| 500 - 950 | SGD3.83 | SGD191.50 |
| 1000 + | SGD3.601 | SGD180.05 |
*price indicative
- RS Stock No.:
- 188-4870
- Mfr. Part No.:
- SIHA100N60E-GE3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | E | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 35W | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.3mm | |
| Height | 15.3mm | |
| Standards/Approvals | RoHS | |
| Width | 4.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series E | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 35W | ||
Maximum Operating Temperature 150°C | ||
Length 10.3mm | ||
Height 15.3mm | ||
Standards/Approvals RoHS | ||
Width 4.7mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 600V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - SIHA100N60E-GE3
Features and Benefits:
• 12A continuous drain current supports moderate load currents
• 0.1Ω Rds(on) reduces conduction losses during operation
• 33nC typical gate charge allows predictable switching behaviour
• 35W power dissipation permits substantial thermal load handling
• 150°C maximum operating temperature supports elevated-temperature use
Applications
• Ideal for switch-mode power supplies handling elevated voltages
• Used for industrial inverter and converter switching elements
• Can be used for relay and contactor driver circuits in control panels
What mounting method is required for reliable installation?
How does gate voltage range affect control circuitry design?
What environmental temperature extremes can it tolerate during operation?
Are there regulatory or material considerations for disposal or reuse?
Related links
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